| ‘g % VS-150EBU047 www'V'Shay'C°m Vishay Semiconductors DYNAMIC RECOVERY cHARAcTE Tics (r_, = 25 °C unless otherwise specified) PARAMETER TEST coNDITIoNS IF :1_[) A, dIF/dt : 200 A/us, VR : 30 V Reverse recovew time R 'F : 150 APeak recovery Current VR : 200 VC d|F/dt : 200 A/Us Reverse reoovew charge THERMAL - MECHANICAL sPEcIFIcATIoNsEEIE‘E junction to case Junction to I-Ieatslnk 2Case style PowerTab 15oEBU04 Mounting torque Marking device Revision: 16-Jun-11 2 Document Number: 93003 For technical questions within your region: Diode§Americas@viShay.Com, DiodesAsia@vi5hay.com, DiQdesEurope@viShay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT wwwvishavcom/doc?91o00 |